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A CMOS Self-Powered Front-End Architecture for ...
103,60 € *
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A CMOS Self-Powered Front-End Architecture for Subcutaneous Event-Detector Devices presents the conception and prototype realization of a Self-Powered architecture for subcutaneous detector devices. The architecture is designed to work as a true/false (event detector) or threshold level alarm of some substances, ions, etc... that are detected through a three-electrodes amperometric BioSensor approach. The device is envisaged as a Low-Power subcutaneous implantable application powered by an inductive link, one emitter antenna at the external side of the skin and the receiver antenna under the skin.The sensor is controlled with a Potentiostat circuit and then, a post-processing unit detects the desired levels and activates the transmission via a backscattering method by the inductive link. All the instrumentation, except the power module, is implemented in the so called BioChip. Following the idea of the powering link to harvest energy of the magnetic induced link at the implanted device, a Multi-Harvesting Power Chip (MHPC) has been also designed.

Anbieter: Dodax
Stand: 08.04.2020
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Model Parameter Extraction for Very Advanced He...
46,90 CHF *
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High-performance applications place very demanding performance requirements on the transistor building blocks. With strongly increased device and circuit complexity as well as manufacturing cost and fabrication time, the importance of semiconductor device modeling has grown rapidly in order to enable circuit design and optimization. Sophisticated compact models are capable of capturing all relevant physical effects occurring in very advanced high-speed Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). However, the usefulness of a compact model for practical industry applications also depends on its model parameters. In this thesis the most widely used methods for extracting the external series resistances of the emitter, base and collector are reviewed and applied to SiGe HBTs of different technologies and generations. Accuracy and application limits of the extraction methods are evaluated including equipment requirements and extraction effort. A complete scalable parameter extraction is performed based on experimental data of two state-of-the-art high-speed SiGe HBT process technologies. The resulting models are highly accurate w.r.t. DC and small-signal, as well as large-signal characteristics.

Anbieter: Orell Fuessli CH
Stand: 08.04.2020
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Model Parameter Extraction for Very Advanced He...
26,99 € *
ggf. zzgl. Versand

High-performance applications place very demanding performance requirements on the transistor building blocks. With strongly increased device and circuit complexity as well as manufacturing cost and fabrication time, the importance of semiconductor device modeling has grown rapidly in order to enable circuit design and optimization. Sophisticated compact models are capable of capturing all relevant physical effects occurring in very advanced high-speed Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). However, the usefulness of a compact model for practical industry applications also depends on its model parameters. In this thesis the most widely used methods for extracting the external series resistances of the emitter, base and collector are reviewed and applied to SiGe HBTs of different technologies and generations. Accuracy and application limits of the extraction methods are evaluated including equipment requirements and extraction effort. A complete scalable parameter extraction is performed based on experimental data of two state-of-the-art high-speed SiGe HBT process technologies. The resulting models are highly accurate w.r.t. DC and small-signal, as well as large-signal characteristics.

Anbieter: Thalia AT
Stand: 08.04.2020
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